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DS1245AB-120IND+

Part No :

DS1245AB-120IND+

Manufacturer
Rochester Electronics
Description
IC NVSRAM 1MBIT PARALLEL 32EDIP
Catalog
Memory
DataSheet
DS1245AB-120IND+ PDF
Unit Price
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Stock Num
52
Min Qty
13
Package
Bulk,Tube

DS1245AB-120IND+ Specifications

Type Description
rohs: RoHS
technology: NVSRAM (Non-Volatile SRAM)
access time: 120 ns
memory size: 1Mb (128K x 8)
memory type: Non-Volatile
part status: Active
memory format: NVSRAM
mounting type: Through Hole
package / case: 32-DIP Module (0.600", 15.24mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4.75V ~ 5.25V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 32-EDIP
write cycle time - word, page: 120ns