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7164S25TDB

Part No :

7164S25TDB

Manufacturer
Rochester Electronics
Description
IC SRAM 64KBIT PARALLEL 28CDIP
Catalog
Memory
DataSheet
7164S25TDB PDF
Unit Price
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Stock Num
0
Min Qty
13
Package
Bulk

7164S25TDB Specifications

Type Description
rohs: RoHS
technology: SRAM - Asynchronous
access time: 25 ns
memory size: 64Kb (8K x 8)
memory type: Volatile
part status: Active
memory format: SRAM
mounting type: Through Hole
package / case: 28-CDIP (0.300", 7.62mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4.5V ~ 5.5V
operating temperature: -55°C ~ 125°C (TA)
supplier device package: 28-CDIP
write cycle time - word, page: 25ns