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MT47H512M4THN-25E:M

Part No :

MT47H512M4THN-25E:M

Manufacturer
Micron Technology
Description
IC DRAM 2GBIT PARALLEL 63FBGA
Catalog
Memory
DataSheet
MT47H512M4THN-25E:M PDF
Unit Price
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Stock Num
0
Min Qty
1
Package
Tray

MT47H512M4THN-25E:M Specifications

Type Description
rohs: RoHS
technology: SDRAM - DDR2
access time: 400 ps
memory size: 2Gb (512M x 4)
memory type: Volatile
part status: Obsolete
memory format: DRAM
mounting type: Surface Mount
package / case: 63-TFBGA
clock frequency: 400 MHz
memory interface: Parallel
voltage - supply: 1.7V ~ 1.9V
operating temperature: 0°C ~ 85°C (TC)
supplier device package: 63-FBGA (8x10)
write cycle time - word, page: 15ns