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DS1250AB-100IND+

Part No :

DS1250AB-100IND+

Manufacturer
Linear Technology (Analog Devices, Inc.)
Description
IC NVSRAM 4M PARALLEL 32EDIP
Catalog
Memory
DataSheet
DS1250AB-100IND+ PDF
Unit Price
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Stock Num
12
Min Qty
1
Package
Tube

DS1250AB-100IND+ Specifications

Type Description
rohs: RoHS
technology: NVSRAM (Non-Volatile SRAM)
access time: 100 ns
memory size: 4Mb (512K x 8)
memory type: Non-Volatile
part status: Active
memory format: NVSRAM
mounting type: Through Hole
package / case: 32-DIP Module (0.600", 15.24mm)
clock frequency: -
memory interface: Parallel
voltage - supply: 4.75V ~ 5.25V
operating temperature: -40°C ~ 85°C (TA)
supplier device package: 32-EDIP
write cycle time - word, page: 100ns